Construction of a MOSFET

The construction of a MOSFET is a bit similar to the FET. An oxide layer is deposited on the substrate to which the gate terminal is connected. This oxide layer acts as an insulator (sio₂ insulates from the substrate), and hence the MOSFET has another name as IGFET. In the construction of MOSFET, a lightly doped substrate, is diffused with a heavily doped region. Depending upon the substrate used, they are called as P-type and N-typeMOSFETs.

The following figure shows the construction of a MOSFET.

The voltage at gate controls the operation of the MOSFET. In this case, both positive and negative voltages can be applied on the gate as it is insulated from the channel. With negative gate bias voltage, it acts as depletion MOSFET while with positive gate bias voltage it acts as an Enhancement MOSFET.